Modelling of the migration effect occurring at an ISFET-based coulometric sensor-actuator system

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Modelling of the migration effect occurring ISFET-based coulometric sensor-actuator system

The migration effect, in addition to diffusion, occurring at an ion-selective field-effect transistor (ISFET)-based coulometric sensor-actuator system has been studied. A diffusion-migration model is presented, based on the numerical solution of the Nemst-Planck equations of which a digital simulation is realized. Corresponding experiments were carried out and compared with the simulation. The ...

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ژورنال

عنوان ژورنال: Analytica Chimica Acta

سال: 1990

ISSN: 0003-2670

DOI: 10.1016/s0003-2670(00)83903-3